The potential to modify semiconductor properties by forming nanostructures presents an exciting new realm for materials engineering, stimulated by recent advances in nanoscale growth and fabrication. This approach enables us to take advantage of phenomena such as quantum confinement, heterointerfaces and anisotropic strain to modify material properties. In our group, we explore a wide range of geometries, such as core-shell nanowires and coherent heterojunction interfaces, to better understand the connections between electronic, mechanical and magnetic properties of nanostructures and their structure, size and composition.
Related Publications
S. Yang, D. Prendergast, and J. B. Neaton, "Tuning Semiconductor Band Edge Energies for Solar Photocatalysis via Surface Ligand Passivation," Nano Lett. 12, 383–388 (2012). Abstract
S. Yang, D. Prendergast, and J. B. Neaton, "Non-linear Variations in the Electronic Structure of II-VI and III-V Wurtzite Semiconductors with Biaxial Strain," Appl. Phys. Lett. 98, 152108 (2011). Abstract
S. Yang, D. Prendergast, and J. B. Neaton, "Strain-Induced Band Gap Modification in Coherent Core/Shell Nanostructures," Nano Letters 10, 3156, (2010). Abstract
Y. Kanai, J. B. Neaton, and J. C. Grossman, "Theory and Simulation of Nanostructured Materials for Photovoltaic Applications," Comp. Sci. Eng. 12, 18, (2010). Abstract